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06DCG F1007 BDX34B AX2011 AX2011 KMM366 2SD1712 AHYAAN
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  s u r f a c e m o u n t s u p e r f a s t r e c o v e r y r e c t i f i e r r e v e r s e v o l t a g e  5 0 t o 6 0 0 v f o r w a r d c u r r e n t  1 a p i n n i n g pin 1 2 description cathode anode simplified outline smbf and symbol mechanical data " " terminals: solderable per mil-std-750, method 2026 " pprox. weight: 57m g / 0.002oz case: smbf a maximum dc blocking voltage peak forward surge current 8.3 ms single half sine wave superimposed on rated load (jedec method) maximum forward voltage at 1 a p a r a m e t e r maximum repetitive peak reverse voltage maximum rms voltage operating and storage temperature range maximum average forward rectified current at t l = 100 c maximum dc reverse current ta = 25 c at rated dc blocking voltage ta =125 c typical junction capacitance at v =4v, f=1mhz r v rrm v rms v dc i f(av) i fsm v f i r c j t, t j stg 50 100 150 200 300 400 600 v 35 70 105 140 210 280 420 v v 1 35 1 5 100 10 35 -55 ~ +150 a a v ?a ns c s y m b o l s ratings at ambient temperature unless otherwise specified. sin gle phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. 25 c a b s o l u t e m a x i m u m r a t i n g s a n d c h a r a c t e r i s t i c s maximum reverse recovery time t rr pf e s 1 a b f e s 1 b b f e s 1 c b f e s 1 d b f e s 1 e b f e s 1 g b f e s 1 j b f u n i t s 50 100 150 200 300 400 600 1.25 1.65 features for surface mounted applications " low profile package " glass passivated chip junction " superfast reverse recovery time " lead free in comply with eu rohs 2011/65/eu directives " typical thermal resistance r ? ja 85 c/w 2 ? 1 ? 1 2 2 ? 1 ? measured with if = 0.5 a, ir = 1 a, irr = 0.25 a 2 p.c.b. mounted with 0. 5 x 0.5" (12.7 x 12.7 mm ) copper pad areas. e s 1 a b f t h r u e s 1 j b f
50 ohm noninductive 25vdc approx + - d.u.t 10 ohm noninductive noninductive 1 ohm oscilloscope note 1 pulse generator note 2 note ? 1 . rise time = 7ns, max. input im pedanc e = 1m egohm,22pf. 2. ries time =10ns, max. source im pedanc e = 50 ohms. f i g . 1 r e v e r s e r e c o v e r y t i m e c h a r a c t e r i s t i c a n d t e s t c i r c u i t d i a g r a m f i g . 3 t y p i c a l r e v e r s e c h a r a c t e r i s t i c s i - current ( a) r reverse ? 20 100 60 0 0.1 1.0 10 % of piv.volts 100 40 80 300 t=25 j c t=75 j c t=125 j c -0.25 -1.0 0 +0.5 t rr 10ns/div set time base for 10ns/div 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 average forward curren t (a) lead temperature ( c) f i g . 2 m a x i m u m a v e r a g e f o r w a r d c u r r e n t r a t i n g single phase half wave resistive or inductive p.c.b mounted on 0.5 0.5"(12.7 ) 12.7mm pad areas. f i g . 5 t y p i c a l j u n c t i o n c a p a c i t a n c e junction capacitance ( pf) revers e voltage (v) 1 100 0.1 2 10 t=25 j c f = 1.0mhz v = 50mv sig p-p 4 6 8 10 12 14 10 30 00 10 100 f i g . 4 m a x i m u m n o n - r e p e t i t i v e p e a k f o r w a r d s u r a g e c u r r e n t peak a) forward surage current ( number of cycles 8.3 ms single half sine wave (jedec method) 1 20 40 f i g . 4 t y p i c a l c h a r a c t e r i s t i c s f o r w a r d 2.0 2.5 1.5 0 0.01 0.1 1.0 10 0.5 1.0 0.001 instaneous forward current (a) instaneous forwar d voltage (v) t=25 j c es1jbf es1ebf/ws1gbf es1abf~es1dbf e s 1 a b f t h r u e s 1 j b f
m a r k i n g type number marking code e1ab e1bb e1cb e1db e1eb e1gb e1jb es1abf es1bbf es1cbf es1dbf es1ebf es1gbf es1jbf t h e r e c o m m e n d e d m o u n t i n g p a d s i z e unit ? mm(mil) 3.0(118) 1.8(71) 2.54(100) 1.8(71) p a c k a g e o u t l i n e p l a s t i c s u r f a c e m o u n t e d p a c k a g e ; 2 l e a d s s m b f a c " all round v a m e unit mm 1.3 0.26 4.4 3.7 5.5 1.1 0.18 4.2 3.5 5.1 9 max min mil max min acde h e " 2.2 1.9 e bottom view h e g to p view 1.0 g g " all round e d a e pad pad 51 10 173 146 216 43 7 165 138 200 86 75 40 e s 1 a b f t h r u e s 1 j b f


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